MMBD4448DW
Document number: DS31035 Rev. 12 - 2
2 of 4
www.diodes.com
February 2011
? Diodes Incorporated
MMBD4448DW
Maximum Ratings
@TA
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Non-Repetitive Peak Reverse Voltage
VRM
100 V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
75 V
RMS Reverse Voltage
VR(RMS)
53 V
Forward Continuous Current (Note 5)
IFM
500 mA
Average Rectified Output Current (Note 5)
IO
250 mA
Non-Repetitive Peak Forward Surge Current @ t < 1μs
@ t < 1s
IFSM
4
1
A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 5)
PD
200 mW
Thermal Resistance Junction to Ambient Air (Note 5)
RθJA
625 °C/W
Operating and Storage Temperature Range
TJ, TSTG
-65 to +150 °C
Electrical Characteristics
@TA
= 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
Reverse Breakdown Voltage (Note 6)
V(BR)R
75
?
V
IR
= 10
μA
Forward Voltage
VF
0.62
?
?
?
0.720
0.855
1.0
1.25
V
IF = 5.0mA
IF
= 10mA
IF
= 50mA
IF
= 150mA
Reverse Current (Note 6)
IR
?
2.5
50
30
25
μA
μA
μA
nA
VR
= 75V
VR
= 75V, T
J
= 150°C
VR
= 25V, T
J
= 150°C
VR
= 20V
Total Capacitance
CT
?
4.0 pF VR
= 0, f = 1.0MHz
Reverse Recovery Time
trr
?
4.0 ns IF
= I
R
= 10mA,
Irr
= 0.1 x I
R, RL
= 100
Ω
Notes: 5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our w
ebsite at http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating.
0
0
50
100
150
200
250
120
80
40
160 200
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N
(mW)
D
T , AMBIENT TEMPERATURE ( C)A
°
Fig. 1 Power Derating Curve, Total Package (Note 5)
10
100
1,000
1
0.1
0
1.6
1.2
0.4 0.8
I , INS
T
AN
T
ANE
O
U
S
F
O
R
WA
R
D
C
U
R
R
EN
T
(mA)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)F
Fig. 2 Typical Forward Characteristics, Per Element
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